H11F1 Photo FET Optocoupler, DIP-6

Fairchild H11F1 photo FET optocoupler in plastic DIP. The H11F1 consists of a Gallium-Aluminium-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector performs like an ideal isolated FET (Field Effect Transistor).

• Fairchild Part#: H11F1
• Isolation Voltage (AC): 5.3kV RMS
• On-State Resistance: 200 Ω
• Emitter Forward Current: 60 mA
• Detector Breakdown Voltage: ±30V
• Detector Continuous Current: 100 mA
• Package: DIP-6
• Operating Temperature: -55°C ~ 100°C
• Datasheet: H11F1.pdf