IRFD112 N-Channel Power MOSFET, 100V, 0.8A, DIP-4

International Rectifier IRFD112 N-Channel Power MOSFET in plastic DIP.

• IR Part#: IRFD112
• Breakdown Voltage (Drain-Source): 200V
• Drain Current (Continuous): 0.8A
• Drain Current (Peak): 6.4A
• Static Drain-to-Source On-Resistance: 0.8Ω
• Operating Temperature: -55 ~ 150°C
• Package: DIP-4 (.300" Wide), Hexdip, HVMDIP
• COO: United States
• Datasheet: IRFD112.pdf