H11F1 Photo FET Optocoupler, DIP-6

  • Item # 2927
  • OO-H11F1
  • 0.002kgs
  • 10 units in stock
  • Manufactured by: Fairchild Semiconductors


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Fairchild H11F1 photo FET optocoupler in plastic DIP. The H11F1 consists of a Gallium-Aluminium-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector performs like an ideal isolated FET.

  • Fairchild Part#: H11F1
  • Isolation Voltage: 5300 Vac (rms)
  • On-State Resistance: 200Ω
  • Emitter Forward Current: 60mA
  • Detector Breakdown Voltage: ±30V
  • Detector Continuous Current: 100mA
  • Package: DIP-6
  • Operating Temperature: -55°C ~ 100°C
  • Datasheet: H11F1.pdf

Product is available since 09/05/2017

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