Fairchild H11F1 photo FET optocoupler in plastic DIP.
The H11F1 consists of a Gallium-Aluminium-Arsenide IRED emitting diode coupled to a
symmetrical bilateral silicon photo-detector. The detector performs like an ideal isolated FET.
- Fairchild Part#: H11F1
- Isolation Voltage: 5300 Vac (rms)
- On-State Resistance: 200Ω
- Emitter Forward Current: 60mA
- Detector Breakdown Voltage: ±30V
- Detector Continuous Current: 100mA
- Package: DIP-6
- Operating Temperature: -55°C ~ 100°C
- Datasheet: H11F1.pdf
This product was added to our catalog on Tuesday 05 September, 2017.